We have many years of experience in the preparation of ceramic piezoelectric materials as well as in the processing of single-crystalline piezoelectric materials.
We have particular expertise in the field of standard piezoceramic materials based on lead titanate or lead zirconate titanate (PZT) and in lead-free materials based on potassium-sodium niobate and bismuth-sodium titanate.
Furthermore, we have extensive knowledge in the field of hydrothermal synthesis of single-crystal piezomaterials as well as liquid-phase epitaxy of gallium orthophosphate GaPO4 which, e.g., is used for a remotely interrogable temperature sensor for the use in thermoprocessors and exhaust gas purification systems.
The manufacture of GaPO4 follows the so called “Hermsdorf route”. Here, epitaxial layers from GaPO4 having the identical lattice plane are applied on selected quartz sections under hydrothermal conditions. This saves a long-time massive growth of GaPO4 crystals, and increases the availability of crystal sections.
Such sensors are working up to a temperature of 400°C. A complete ceramic packaging allows for the application far above the operating temperature as the measurement system is sufficiently thermally stable under these conditions, and the measurement capability is again given at a temperature drop below 400°C. These sensors are used in the low-temperature burning technology, in soot particle filters and in ovens.
- Evaluation of material systems for customer applications
- Development of laboratory technologies for powder synthesis of piezoelectric materials
- Development of piezoelectric green tapes
- System-relevant development of remotely interrogable temperature sensors based on GaPO4
- Adjustment of antenna systems for remotely interrogable temperature sensors
- Epitaxial manufacture of planar GaPO4 single crystals
- Standard processing technology for piezoceramic powders
- Tape caster for piezoceramic tapes
- Various sintering furnaces
- Hydrothermal synthesis equipment for quartz and GaPO4
- Equipment for liquid-phase epitaxy of GaPO4