Fraunhofer Institute for Ceramic Technologies and Systems IKTSElectromigration (EM) refers to the transport of metal ions in interconnect lines under the influence of an electric current. In this process, electrons transfer their momentum to the metal ions ("electron wind"), which can lead to material displacement, void formation, and ultimately to the failure of interconnect lines. Electromigration is particularly relevant for on-chip interconnects with cross-sections of less than 40 nm x 100 nm, as extremely high current densities occur here.
As microelectronic components continue to miniaturize, electromigration will make it more difficult to further downscale interconnect lines. To ensure reliability in the future, new materials, designs, and manufacturing processes that are resistant to electromigration are becoming increasingly important. For their development and characterization, Fraunhofer IKTS has test methods for large sample populations (>1000) for the detection of very early failures (with on-chip Wheatstone bridge design). This allows the electromigration behavior to be tested under various conditions that go far beyond standard tests. The test methods are supported by advanced simulations and EM models.
