Transparent, conductive zinc oxide is a promising material for many applications in the electronic and solar industry. The electronic and optical properties are adjustable by selective choice of the chemical precursor and optimized process parameters.
Based on specific precursors containing silicon, titanium or zinc further thin films with different characteristics are available. Silicon layers with different degree of crystallinity from amorphous to microcrystalline (a-Si, nc-Si and µc-Si) can be deposited by chemical vapor deposition on several substrates (e.g. glass, polymer). Additionally, amorphous silicon carbide layers (SiCx) with diffent Si to C ratio are developed and characterized.
- Specific modification of liquid precursors
- Optimization of process parameters
- Up-scaling and transfer to semi-industrial scale
- Multiple materials with several deposition methods
- Film thickness from nano- to micrometer scale
- Films with adjustable degree of crystallinity (amorphous, nanocrystalline, microcrystalline)
- PE CVD tool: substrate sizes < 19 inch; temperature < 450°C
- Spin coater: substrate size < 4 inch; temperature < 1000°C; speed up to 7000 rpm; inert atmosphere
- Hot plate: substrate size < 4 inch; temperature < 900 °C @ 70 K/min; inert atmosphere
- Motorized dip coater; Inert atmosphere
- Functional layers in solar cells (TCO, absorber, barrier and ARC)
- TCO layers for electronics